| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f0cf2cb4cd3911ca05abf11fd7f27127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_15e7144bd4c1deac5d709f0917c227e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ee244e668c60510124daa7502daeab62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_77f5bd1a751fa4440f99f09cc380f8ed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-32 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00 |
| filingDate |
2007-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d040a5dff0b53bdd6b347c68dfc21093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed17bb409a9dd3e2d32d8dbc2ca219de
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d3d5555debd0eb574c44920b6c549bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a7d28540045760b65926cd4b1f1cc3e |
| publicationDate |
2008-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008318137-A1 |
| titleOfInvention |
Lithography masks for improved line-end patterning |
| abstract |
In one embodiment, a mask for use in semiconductor processing comprises a first region formed from a first material that is primarily opaque, a second region formed from a second material that is primarily transmissive, and a third region in which at least a portion of the second material is removed to generate a phase shift in radiation applied to the mask. |
| priorityDate |
2007-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |