| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D487-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 |
| filingDate |
2005-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5598150980d636ed46937648bf92f8d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6e90cfa0600d18d5984c4e9b2840e0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac74e59d167a2ab7e5f7414fff768971
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66ff05c31f1c76cd35d391c8ff65aea9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a883ecde8eff8ba06014bd8f41b59ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a3dc530a008185545d7b71a6106845a |
| publicationDate |
2008-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008308789-A1 |
| titleOfInvention |
Field Effect Transistor and Method of Producing the Same |
| abstract |
An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity I 1 in a Bragg angle (2θ) range of 9.9° to 10.4° stronger than a maximum diffraction intensity I 2 in a Bragg angle (2θ) range of 23.0° to 26.0° in X-ray diffraction using CuKα radiation. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11094717-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009263933-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8021915-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7791069-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7795636-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8658459-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009124040-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2418684-A4 |
| priorityDate |
2004-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |