| abstract |
An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized carborane cluster ions are implanted into semiconductor substrates to perform doping of the substrate. The carborane cluster ions have the chemical form C 2 B 10 H x + , C 2 B 8 H x + and C 4 B 18 H x + and are formed from carborane cluster molecules of the form C 2 B 10 H 12 ,C 2 B 8 H 10 and C 4 B 18 H 22 The use of such carborane molecular clusters results in higher doping concentrations at lower implant energy to provide high dose low energy implants. In accordance with one aspect of the invention, the carborane cluster molecules may be ionized by direct electron impact ionization or by way of a plasma. |