patent/US-2008296618-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008296618-A1

Outgoing Links

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classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-432 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
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filingDate	2008-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8857236a09f4568e2477d43d0e88510 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1cab9804f3297102fe0e3801f5cdcaf
publicationDate	2008-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-2008296618-A1
titleOfInvention	P-GaN/AlGaN/AlN/GaN ENHANCEMENT-MODE FIELD EFFECT TRANSISTOR
abstract	An enhancement mode High Electron Mobility Transistor (HEMT) comprising a p-type nitride layer between the gate and a channel of the HEMT, for reducing an electron population under the gate. The HEMT may also comprise an Aluminum Nitride (AlN) layer between an AlGaN layer and buffer layer of the HEMT to reduce an on resistance of a channel.
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Total number of triples: 144.