http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008286899-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb2961d4b1518c3f689e698ec2270ceb |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-04941 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate | 2008-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f0c61a3beacdc63b92fa9ef6e4b73ad |
| publicationDate | 2008-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2008286899-A1 |
| titleOfInvention | Method for manufacturing semiconductor device and method for manufacturing system-in-package using the same |
| abstract | A method for manufacturing a semiconductor device and a method for manufacturing a system-in-package using the same, which are capable of enhancing reliability and the step coverage for a trench having a high aspect ratio. The semiconductor manufacturing method includes forming a first insulating film over a substrate; and then forming first and second metal patterns over the first insulating film; and then forming a second insulating film over the first insulating film including the first and second metal patterns; and then forming a trench extending through the first and second insulating films and into the substrate thereby exposing the substrate; and then sequentially forming first and second oxide films over the second insulating film and in the trench; and then forming a via hole exposing the first metal pattern; and then sequentially forming first and second barrier metal films over a resultant surface of the substrate including the second oxide film; and then forming a copper layer over the second barrier metal film and in the trench and the via hole; and then planarizing the copper layer exposing a portion of the second barrier metal film; and then forming a copper pad by recessing predetermined portions of the second barrier metal film, the first barrier metal film, the second oxide film and the first oxide film exposing the second insulating film at opposite sides of the copper pad. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013299949-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8405190-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2987937-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010069642-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013135999-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8841755-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9355961-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104247004-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011061296-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2596526-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2596526-A2 |
| priorityDate | 2007-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.