| abstract |
The present invention provides a field-effect transistor and method for the fabrication of a field-effect transistor by deposition on a substrate ( 480 ), which method comprises a wet chemical deposition of materials that react to form a semi-conducting material. The materials deposited include cadmium, zinc, lead, tin, bismuth, antimony, indium, copper or mercury. The wet chemical deposition may be by chemical bath deposition or spray pyrolysis. A vacuum deposition process is not required. |