Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
filingDate |
2007-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_205c26f8e4cfa00812bc35ab7dfad72a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91806f50748270c0625e2f36bcab4ff3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cf3ec2233325a4010719a83d8728795 |
publicationDate |
2008-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2008277730-A1 |
titleOfInvention |
Semiconductor Device Manufactured Using a Laminated Stress Layer |
abstract |
There is presented a method of forming a semiconductor device. The method comprises forming gate structures including forming gate electrodes over a semiconductor substrate and forming spacers adjacent the gate electrodes. Source/drains are formed adjacent the gate structures, and a laminated stress layer is formed over the gate structure and the semiconductor substrate. The formation of the laminated stress layer includes cycling a deposition process to form a first stress layer over the gate structures and the semiconductor substrate and at least a second stress layer over the first stress layer. After the laminated layer is formed, it is subjected to an anneal process conducted at a temperature of about 900° C. or greater. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013044427-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9799768-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11569370-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9761718-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020411661-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11450771-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10541332-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009224293-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103035524-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102479719-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8652893-B2 |
priorityDate |
2007-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |