| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a34d7d2e0d09a58cb7bf4a04c81162e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-019
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49156
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49128
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0271 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-2447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00142
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H3-0072 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H3-007 |
| filingDate |
2008-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15e7e4f4ece4444f84f9849cad8b0439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d65ce57925160b8f5675ef6ca5fe69d3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_caaad6558439098a2dd3f810dd2b0738 |
| publicationDate |
2008-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008261372-A1 |
| titleOfInvention |
Method of manufacturing vibrating micromechanical structures |
| abstract |
A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9318555-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011114918-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8440523-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8673703-B2 |
| priorityDate |
2005-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |