http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008257262-A1

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filingDate 2008-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19183aef4ab542ef8713cc6283bd6646
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publicationDate 2008-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2008257262-A1
titleOfInvention Susceptor Designs for Silicon Carbide Thin Films
abstract A susceptor is disclosed for minimizing or eliminating thermal gradients that affect a substrate wafer during epitaxial growth. The susceptor includes a first susceptor portion including a surface for receiving a semiconductor substrate wafer thereon, and a second susceptor portion facing the substrate receiving surface and spaced from the substrate-receiving surface. The spacing is sufficiently large to permit the flow of gases therebetween for epitaxial growth on a substrate on the surface, while small enough for the second susceptor portion to heat the exposed face of a substrate to substantially the same temperature as the first susceptor portion heats the face of a substrate that is in direct contact with the substrate-receiving surface.
priorityDate 1997-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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