| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0d3579b0c3eb2b5f290bb5d9c72443b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cbe72040c44e5523789c6ce2dca134d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_28e51225417ca2d244f6bf4bc7b0906a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2007-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81b57b48697e6bae27c64272d8a06744
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4be5b77825aaf233d7d5ec919bbb9acd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a69e005f33f0f21846afee2b61b390d |
| publicationDate |
2008-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008254638-A1 |
| titleOfInvention |
Etch process with controlled critical dimension shrink |
| abstract |
Methods to etch an opening in a substrate layer with reduced critical dimensions are described. A multi-layered mask including a lithographically patterned photoresist and an unpatterned organic antireflective coating (BARC) is formed over a substrate layer to be etched. The BARC layer is etched with a significant negative etch bias to reduce the critical dimension of the opening in the multi-layer mask below the lithographically define dimension in the photoresist. The significant negative etch bias of the BARC etch is then utilized to etch an opening having a reduced critical dimension into the substrate layer. To plasma etch an opening in the BARC with a significant negative etch bias, a polymerizing chemistry, such as CHF 3 is employed. In a further embodiment, the polymerizing chemistry provide at low pressure is energized at a relatively low power with a high frequency capacitively coupled source. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103854995-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014197597-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018323078-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11393715-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010270262-A1 |
| priorityDate |
2007-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |