http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008243460-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3afdd129150c38d6dd7facfa12fa6db8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d4c1f603437dc18410ffd2b9d7cea6d0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6070ed5a9d69adc94dd2945629bb2e7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-404 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06G7-58 |
| filingDate | 2008-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_223c180769cff07340557b27abbd0e64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3de78150a68e2705e77ea9dee835c1b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c4bee64ace3d0f9de9422bcaf3aff5e |
| publicationDate | 2008-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2008243460-A1 |
| titleOfInvention | Precursor selection method for chemical vapor deposition techniques |
| abstract | A method of precursor selection for thin film deposition is provided, that includes a group of precursors, using a rule-set for selecting one or more candidate precursors for thermal stability, high growth rate, and low contamination. Candidate geometries and constituent geometries are simulated and optimized, and bond strengths of the candidates and constituents are determined. The rule-set is based on bond strength that compares molecule and constituent energies between a set of bond strengths within a candidate ligand or between a metal atom and one ligand. The rule-set requires metal atom-ligand bonds are between 0.2 and 3 eV, metal atom-ligand bond strengths are less than metal atom-ligand bond strengths of other candidates. The metal atom-ligand bond strength is >TΔS, where T is a reaction temperature and ΔS is the reaction entropy change and the bond within a ligand, where (ligand bond)>(metal atom and ligand bond). |
| priorityDate | 2007-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.