| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa376da45d16e201a6c1c201187db888 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2007-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c7cef2145fdf4c7868a6f432b110f96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6747601ffff4d852938852ed9fd5ae57 |
| publicationDate |
2008-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008242078-A1 |
| titleOfInvention |
Process of filling deep vias for 3-d integration of substrates |
| abstract |
A method for filling defect-free conductive material in deep vias or cavities in semiconductor wafers in 3-D integration structures is provided. The process may be performed in at least two steps for depositing the conductive material, including a first deposition step that partially fills the cavity with the conductive material and forms a conformal layer, which may also reduce the depth and width of the cavity, and a second deposition step that completely fills the same conductive material into the space defined by the conformal layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3046878-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11335720-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017125336-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10767257-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108475660-A |
| priorityDate |
2007-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |