| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_48d9b5b5c83f8d82d1080f2118962043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dbd1dc2d346b8361e705f616719c126c |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7881
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2007-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bb8d773f276c5112dd2b2de2e76d9a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b20b7ef766453baddf747af64a8f635f |
| publicationDate |
2008-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008237683-A1 |
| titleOfInvention |
High-k trilayer dielectric device and methods |
| abstract |
Methods and structures are described for reducing a gate leakage current and increasing gate coupling ratio in a semiconductor device. In some embodiments, nitride layers are used to limit the oxidation of adjacent silicon gate regions due to oxygen in an intermediate insulator. In various embodiments, the intermediate insulator includes a high-κ dielectric material. Apparatus according to embodiments of the invention are also disclosed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10818559-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9449887-B2 |
| priorityDate |
2007-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |