http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008233272-A1

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publicationDate 2008-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2008233272-A1
titleOfInvention Film Formation Apparatus, Manufacturing Apparatus, Film Formation Method, and Method for Manufacturing Light-Emitting Device
abstract To improve the use efficiency of a vapor-deposition material, reduce the manufacturing cost of a light-emitting device including a layer containing an organic compound, and shorten the manufacturing time for manufacturing a light-emitting device. Inside of a film formation chamber is made in a reduced pressure state, and conductive-surface substrate is energized, so that the conductive-surface substrate is heated rapidly, and a material layer over the conductive-surface substrate is evaporated in a short period of time to be vapor-deposited on a film formation substrate, whereby film formation of the material layer is performed on the film formation substrate. Note that the heating area of the conductive-surface substrate which is rapidly heated is set to be the same size as the film formation substrate so that film formation on one film formation substrate is completed by one heating.
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