http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008218912-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44b2ac87aeadb161b83426d9cf6c4bdc |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B2005-3996 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3906 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y25-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-39 |
| filingDate | 2007-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_910794b20d6a62b149454220b2bae4df http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8336c8da2a7939cbb34ca43a76b25a00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64997296520930180b72cd634a2d1a60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50062c3301f86f3d0821f876b7303c3d |
| publicationDate | 2008-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2008218912-A1 |
| titleOfInvention | CPP-type magnetoresistive element having spacer layer that includes semiconductor layer |
| abstract | An MR element includes: a free layer whose direction of magnetization changes in response to a signal magnetic field; a pinned layer whose direction of magnetization is fixed; and a spacer layer disposed between these layers. The spacer layer includes: a semiconductor layer made of an n-type semiconductor; and a Schottky barrier forming layer made of a metal material having a work function higher than that of the n-type semiconductor that the semiconductor layer is made of, the Schottky barrier forming layer being disposed in at least one of a position between the semiconductor layer and the free layer and a position between the semiconductor layer and the pinned layer, touching the semiconductor layer and forming a Schottky barrier at an interface between the semiconductor layer and itself The semiconductor layer is 1.1 to 1.7 nm in thickness, and the Schottky barrier forming layer is 0.1 to 0.3 nm in thickness. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10755733-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009067099-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011261478-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9177574-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7944650-B2 |
| priorityDate | 2007-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.