| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2007-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45a0f2ed0b7a66741a9a02d6d09785b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6a42541e19c5bacc5ea7b2088bf9752
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_342c2b481f358aa4e1bbb42b861ef97c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a156533a5d11be9ef5cc3497d05a7c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7232f48d5f42e61cbc2cc3b53d31499 |
| publicationDate |
2008-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008211106-A1 |
| titleOfInvention |
Via/contact and damascene structures and manufacturing methods thereof |
| abstract |
A method for forming a semiconductor structure includes forming a dielectric layer over a substrate. A first non-conductive barrier layer is formed over the dielectric layer. At least one opening is formed through the first non-conductive barrier layer and within the dielectric layer. A second non-conductive barrier layer is formed over the first non-conductive barrier layer and within the opening. At least a portion of the second non-conductive barrier layer is removed, thereby at least partially exposing a top surface of the first non-conductive barrier layer and a bottom surface of the opening, with the second non-conductive barrier layer remaining on sidewalls of the opening. A seed layer and conductive layer is then formed and a single polishing operation removes the seed layer and conductive layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8513119-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8952506-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9449875-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9716074-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9997497-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015357296-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8466059-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9633900-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010171197-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11521923-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11127631-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8900994-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9312225-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010140805-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11694927-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9299676-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8791549-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9978708-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8841773-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163756-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011068466-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018204909-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9960129-B2 |
| priorityDate |
2007-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |