http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008202037-A1

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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_974854cef41cbcf367f33f89a6689c25
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publicationDate 2008-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2008202037-A1
titleOfInvention Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide
abstract The present invention provides auto-stopping CMP slurry compositions that minimize post-CMP non-uniformity and also extend the time that polishing can be continued beyond the end point without the risk of over-polishing the dielectric silicon dioxide film. Auto-stopping CMP slurry compositions according to the invention include ceria abrasive particles and an effective amount of a polyalkylamine such as polyethyleneimine dispersed in water. The methods of the invention include polishing a topographic dielectric silicon dioxide film layer using the auto-stopping CMP slurry compositions to obtain a dielectric silicon dioxide surface having a desired predetermined minimum step height.
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