| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_95ef563390a55ed46e16ee22afc87121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa95c93e0cedc090c58dd52d26c10abb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_198b346df1a9862a43c19aea5ffad584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5649a0133705cb9099cae5395c98d638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6819846d4fd3f89dfe1aa2f0e4e0fa45 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L47-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2007-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc7307b8971af6fb1a7f03aeb8913a3a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5a8fcbec8ee869cf0e2994d36fd006b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d33e35b865802b8d9c166fa82d9da64d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e570ba8c3e24af19546eba2a02d04010
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26344392524140d0aa442f637ef742f7 |
| publicationDate |
2008-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008185573-A1 |
| titleOfInvention |
Methods for forming resistive switching memory elements |
| abstract |
Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8519376-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015004747-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013119337-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008185567-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013260508-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8962385-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015053908-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008185572-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8476107-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010237311-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8283214-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7972897-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013134757-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8456900-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9178145-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8445883-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9105837-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102194994-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014231744-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7678607-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8865518-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011220860-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012178210-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011161605-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9112144-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010102289-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8835897-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102593352-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8963275-B2 |
| priorityDate |
2007-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |