| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate |
2008-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c95f4fc13fae916d96e434afb9786199
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1322ad38cdf78abf3c48e4fd6127ad75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a814a742e9cd2390905bda7b203e677a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb50af7f7cff4a79313e835844f00493
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6bccafcba0bf7ab564b96fb7617d7a4 |
| publicationDate |
2008-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008179746-A1 |
| titleOfInvention |
Wiring structures of semiconductor devices and methods of forming the same |
| abstract |
A wiring structure of a semiconductor device comprises an insulating interlayer, a plug and a conductive pattern. The insulating interlayer has an opening therethrough on a substrate. The plug includes tungsten and fills up the opening. The plug is formed by a deposition process using a reaction of a source gas. A conductive pattern structure makes contact with the plug and includes a first tungsten layer pattern and a second tungsten layer pattern. The first tungsten layer pattern is formed by the deposition process. The second tungsten layer pattern is formed by a physical vapor deposition (PVD) process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9461059-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012025386-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9553168-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8129791-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015110830-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010044757-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015064866-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009004848-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10157929-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9768183-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8399930-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8471297-B2 |
| priorityDate |
2007-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |