| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_440b3059c9bcd1d85fd383f9b2ae1b40 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 |
| filingDate |
2007-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d01a3695df4f3e6b5d516e2ac849238e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9223843b4392aecb147caffa518fc8bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bebddd229afa4bf9305812040640b7a2 |
| publicationDate |
2008-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008173867-A1 |
| titleOfInvention |
Semiconductor device, method for manufacturing the same, electro-optical device and electronic apparatus |
| abstract |
A semiconductor device includes a substrate, a transparent oxide layer disposed on one surface side of the substrate, a gate disposed apart from the transparent oxide layer, and a gate insulating layer disposed between the transparent oxide layer and the gate. The transparent oxide layer includes a source, a drain, and a channel formed integrally between the source and the drain, and is made of a transparent oxide material as the main material. The gate provides an electric field to the channel. The gate insulating layer insulates the source and the drain from the gate. The average thickness of the channel is smaller than the average thickness of the source and the drain so that the source and the drain function as conductors and the channel functions as a semiconductor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9711651-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8754457-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010237229-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9123752-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011201193-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9202895-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8124924-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8258005-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102870245-A |
| priorityDate |
2006-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |