Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2007-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dffaf5bde16f66112f6bff1092de8d1f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3224c3bdfc81965402ef4cd0048c1847 |
publicationDate |
2008-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2008169510-A1 |
titleOfInvention |
Performance enhancement on both nmosfet and pmosfet using self-aligned dual stressed films |
abstract |
In an integrated circuit comprising both PMOSFETs and NMOSFETs, carrier mobility is enhanced on both types of FETs using dual stressed films. The adverse impact of having both layers of stressed films along the boundary between different types of films is eliminated by utilizing self-alignment of the edges of a second stressed film to a preexisting edge of a first stressed film. At the boundary between the two stressed films, one stressed film abuts another but no stressed film overlies another stressed film. By avoiding any overlap of stressed films, the stress exerted on the MOSFET channels is maximized. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7964923-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7981751-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011143961-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010035400-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8928089-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I787339-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102254914-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7615831-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009309164-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009108378-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8492218-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7960223-B2 |
priorityDate |
2007-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |