| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b840b7871b8c6f9979970f0238bfc2bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S117-915 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-00 |
| filingDate |
2006-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86b940331079eab69920296ef6ca7ea6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2e58db3ee0fa973d9e78ea3a0c5c276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8cc483b59aa897326b2bb5efe0cfc66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_189a1ce675a4f9a3983a5d3ca502b8ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4878051bab8127863e36edd10e44b49c |
| publicationDate |
2008-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008166522-A1 |
| titleOfInvention |
Method for Producing III-N Layers, and III-N Layers or III-N Substrates, and Devices Based Thereon |
| abstract |
An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed. |
| priorityDate |
2005-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |