http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008160459-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8310d57730062302ee4f0e28b79fc43f
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
filingDate 2006-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4598b3d59fda32e8a253a1460cde368c
publicationDate 2008-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2008160459-A1
titleOfInvention Method of forming a pattern
abstract A method of forming a pattern comprising steps as follow. A substrate comprising a layer to be etched is provided. A first resist layer is formed on the substrate. The top of the first resist layer is patterned. A second resist layer is formed on the first resist layer being patterned. A portion of the second resist layer is removed. The first resist layer, the second resist layer, and the layer to be etched are etched. A fine pattern can be obtained using the method of the present invention, while the resist layer used is not too thin. Thus, the bad adhesion of the resist layer to the substrate and the less etch resistance of the resist layer for protecting underlying layers will not occur.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8084186-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8501394-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010203299-A1
priorityDate 2006-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6025117-A
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Total number of triples: 31.