| abstract |
An epitaxial layer regrowth method and device. A single crystal seed layer is deposited on a support wafer. An exfoliation layer is implanted in the single crystal seed layer. Trenches are etched in a portion of the single crystal seed layer and a portion of the exfoliation layer. The single crystal seed layer, on the support wafer, is bonded to a substrate. The support wafer and the exfoliation layer are removed leaving behind one or more single crystal seeds, generated from the single crystal seed layer, on the substrate. A first epitaxial layer is grown on the substrate from the single crystal seeds and a device layer is grown on the first epitaxial layer. In an alternative embodiment, a single crystal seed layer is deposited on a support wafer comprising an etch stop. |