http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008156266-A1

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-513
filingDate 2007-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_072a2a54b039814a40c3d721a96172ad
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publicationDate 2008-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2008156266-A1
titleOfInvention Plasma processing apparatus
abstract A clearance between a metal electrode and a sidewall portion (sidewall) of an approximately U-shaped dielectric is adjusted by, for example, partially inserting a heat insulator, a heat shield or an insulating material. Temperature difference in the Z direction (vertical direction) of the sidewall portion of approximately U-shaped dielectric is made smaller than temperature difference between front and rear sides at the bottom (bottom portion) of approximately U-shaped dielectric, to reduce warp in the Z direction of the sidewall portion of approximately U-shaped dielectric. This curbs warp in the Z direction of the bottom portion of approximately U-shaped dielectric coupled to the sidewall portion. The warp in the Z direction, which would be generated if the temperature difference only between the front and rear surfaces at the bottom were considered, can be curbed by utilizing the sidewall portion of approximately U-shaped dielectric.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11610765-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017213707-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018096235-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152196-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3059341-A1
priorityDate 2006-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 24.