http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008153284-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a4fde76aa45c5bb30b059b8927216008 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate | 2007-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51d0a2c6bd7cc707e3bc750adb87dd6b |
| publicationDate | 2008-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2008153284-A1 |
| titleOfInvention | Method of Manufacturing Semiconductor Device |
| abstract | Provided is a method of manufacturing a semiconductor device. In the method according to an embodiment a first electro-chemical plating process using a CuCl 2 solution is performed to form a first copper buried layer on a seed layer. A second electro-chemical plating process using a CuSO 4 solution is performed to form a second copper buried layer on the first copper buried layer. Then, a chemical mechanical polishing process can be performed to form a metal line from the first and second copper buried layers formed in a trench and a via hole. Through this method, the generation of a void in the metal line is restrained, and uniform metal lines can be formed. |
| priorityDate | 2006-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.