| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6cb7de00e82617e75c8f0cfeae1d0099
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3cdea74c32fc8cb13a5a91e49e54b9ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3eadd1118aed2b236050b37226e00ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3e234c871e8257a690244831ddf54aaf |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2008-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33fef908245e1abd800ed3e90f8aef74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab58132ea59f4ce9e85da7e5e5ec9cc2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41f93cf0701665bc18d63d5582886bb4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af613daa40ca2712b9ab60bd32806425 |
| publicationDate |
2008-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008146029-A1 |
| titleOfInvention |
Method of forming an interconnect structure |
| abstract |
A method of forming damascene interconnect structure in an organo-silicate glass layer without causing damage to the organo-silicate glass material. The method includes forming a stack of hardmask layers over the organo-silicate glass layer, defining openings in the hardmask and organo-silicate glass layers using a combination of plasma etch and plasma photoresist removal processes and performing one or more additional plasma etch processes that do not include oxygen containing species to etch the openings to depths required for forming the damascene interconnect structures and to remove any organo-silicate material damaged by the combination of plasma etch and plasma photoresist removal processes. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I785110-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7491640-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008102639-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10658192-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008166873-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9761488-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7858476-B2 |
| priorityDate |
2005-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |