| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1e3d8364bf64e4ac6e1a9cd5df2bd54 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2006-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c981000debcf496500c33ae629d3685 |
| publicationDate |
2008-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008138949-A1 |
| titleOfInvention |
Semiconductor device with amorphous silicon monos memory cell structure and method for manufacturing thereof |
| abstract |
A semiconductor device with an amorphous silicon (a-Si) metal-oxide-nitride-oxide-semiconductor (MONOS) memory cell structure. The device includes a substrate, a dielectric layer overlying the substrate, and one or more source or drain regions embedded in the dielectric layer with a co-planar surface of n-type a-Si and the dielectric layer. Additionally, the device includes a p-i-n a-Si diode junction. The device further includes an oxide-nitride-oxide (ONO) charge trapping layer overlying the a-Si p-i-n diode junction and a metal control gate overlying the ONO layer. A method for making the a-Si MONOS memory cell structure is provided and can be repeated to expand the structure three-dimensionally. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009321814-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109564892-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011140191-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011140192-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009261331-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9064804-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8110453-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011156123-A1 |
| priorityDate |
2006-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |