Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C5-00 |
filingDate |
2007-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec72e12d4077c325ad02dc88ccb08bb3 |
publicationDate |
2008-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2008131814-A1 |
titleOfInvention |
Method for forming a fine pattern of a semiconductor device |
abstract |
A method for forming a pattern of a semiconductor device using an immersion lithography process includes pretreating a top portion of the photoresist film with an alkane solvent or alcohol in the immersion lithography process to form a uniform over-coating film. |
priorityDate |
2006-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |