| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_826745371ab68e370c0f735e7f5c1097
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_616592672ec58e383ef5a431bad121c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73b9af09b93b0cf9fc9b07e500666f43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6fce67b8a4678b6bd6f0b99e96836b64 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-12 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
| filingDate |
2007-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0928050f48ec7314b77dd4c6c87b61a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acdf80c1c76b4aa36fa97f4edafa3fe8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f691e3e173d2fce8213638a4a6d9025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_522194d07cdd6efaf2d3779b2c2edafd |
| publicationDate |
2008-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008128685-A1 |
| titleOfInvention |
Organic semiconductor device, manufacturing method of same, organic transistor array, and display |
| abstract |
A major object of the present invention is to provide an organic semiconductor device which is provided with an organic semiconductor transistor having good transistor performance and is producible with high productivity. To achieve the object, the present invention provides an organic semiconductor device comprising: a substrate, a source electrode and a drain electrode which are formed on the substrate; an insulation partitioned part which is formed on the source electrode and the drain electrode, made of an insulation material, formed such that an opening part of the insulation partitioned part is disposed above a channel region formed by the source electrode and the drain electrode and has a function as an interlayer-insulation layer; an organic semiconductor layer which is formed in the opening part of the insulation partitioned part and on the source electrode and the drain electrode, and made of an organic semiconductor material; a gate insulation layer which is formed on the organic semiconductor layer and made of an insulation resin material; and a gate electrode formed on the gate insulation layer, wherein; the insulation partitioned part has a height ranging from 0.1 μm to 1.5 μm. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772774-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016213221-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8309952-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010051922-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011220909-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009098680-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8450142-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009057656-A1 |
| priorityDate |
2006-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |