| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24802 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-00 |
| filingDate |
2008-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3f0b2e3f1f3dfe2f311686c9478156a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8be05eeda15e9ffa45e0a3a02fceec2b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_164f45908e47d2d363d53d3ce9b8a06d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_adc3755b0baddc46b44a146d02c6622d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54443ef5fcf8a61f8bace955b10bd972
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_903adaacc70d1a0532ed74835211bc4c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4135c472c8309d0c4a71716ef4531d85 |
| publicationDate |
2008-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008118717-A1 |
| titleOfInvention |
Hardmask for improved reliability of silicon based dielectrics |
| abstract |
The present invention provides a hardmask that is located on a surface of a low k dielectric material having at least one conductive feature embedded therein. The hardmask includes a lower region of a hermetic oxide material located adjacent to the low k dielectric material and an upper region comprising atoms of Si, C and H located above the hermetic oxide material. The present invention also provides a method of fabricating the inventive hardmask as well as a method to form an interconnect structure containing the same. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103229281-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012071163-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012071163-A2 |
| priorityDate |
2004-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |