http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008118707-A1

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-00
filingDate 2006-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a00780a9aceae4dbc10af7a76e7e7048
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publicationDate 2008-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2008118707-A1
titleOfInvention Method and structure of pattern mask for dry etching
abstract The present invention provides a structure for etching process. The structure has a mask for protecting an area of a wafer from being etched and a seal ring attached under a lower surface of the mask. The mask has at least one air opening to expose an area to be etched. Furthermore, the mask is attached on the wafer through the seal ring. In addition, the present invention provides also a method to form a mask for dry etching process. First, the present invention includes a step of providing a base material and coating the masking material on both sides of the base material. The next step is to pattern the masking material to form openings. Subsequently, the base material is etched through the openings to create at least one mask opening and a mask cavity. Finally, removing the mask material is performed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102905459-A
priorityDate 2006-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 34.