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publicationNumber US-2008111237-A1
titleOfInvention Semiconductor device manufactured using an electrochemical deposition process for copper interconnects
abstract A method of manufacturing a semiconductor device that comprises forming an insulating layer over a semiconductive substrate 110 and forming a copper interconnect. Forming the interconnect includes etching an interconnect opening in the insulating layer and filling the opening with copper plating. Filling with copper plating includes using a first and second ECD. An electrolyte solution of the first and second ECD contains organic additives, and a current of the first ECD is greater than a current of the second ECD.
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