| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc905cbef116a1ec61d12125af9427f3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8413
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-06 |
| filingDate |
2007-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c97b8acd666f7bbccc121ffc417350ac |
| publicationDate |
2008-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008108176-A1 |
| titleOfInvention |
Phase change memory and fabricating method thereof |
| abstract |
A phase change memory including a phase change layer, a first electrode, and a porous dielectric layer formed with a plurality of pores. The porous dielectric layer is formed between the phase change layer and the first electrode. Therefore, the phase change layer may make contact with the first electrode thorough the pores thereby decreasing the contact areas of the phase change layer and the first electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9997703-B2 |
| priorityDate |
2005-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |