| abstract |
A method for forming a MOS transistor includes providing a substrate having at least a gate structure formed thereon, performing a pre-amorphization (PAI) process to form amorphized regions in the substrate, sequentially performing a co-implantation process, a first ion implantation process, and a first rapid thermal annealing (RTA) process to form lightly doped drains (LDDs), forming spacers on sidewalls of the gate structure, and forming a source/drain. |