| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_870b2b297aa0b41807e6f385fb4b31b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6119b343b4ffcb4e3ae6b69bfc11bfc5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2211-5621 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3454
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3459
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C7-04 |
| filingDate |
2007-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd7047225c994f9f742c07694211dfe8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90c0bf8c3e8fee53dcc50d95e32c92ed |
| publicationDate |
2008-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008094908-A1 |
| titleOfInvention |
Temperature compensation of voltages of unselected word lines in non-volatile memory based on word line position |
| abstract |
Reading and verify operations are performed on non-volatile storage elements using temperature-compensated read voltages for unselected word lines, and/or for select gates such as drain or source side select gates of a NAND string. In one approach, while a read or verify voltage is applied to a selected word line, temperature-compensated read voltages are applied to unselected word lines and select gates. Word lines which directly neighbor the selected word line can receive a voltage which is not temperature compensated, or which is temperature-compensated to a reduced degree. The read or verify voltage applied to the selected word line can also be temperature-compensated. The temperature compensation may also account for word line position. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9683904-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009316489-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8542000-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8941369-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7889575-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010095847-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9715913-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8644075-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8526233-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8004917-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8120952-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7719888-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010165741-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8228739-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9541456-B2 |
| priorityDate |
2006-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |