| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73b9af09b93b0cf9fc9b07e500666f43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_826745371ab68e370c0f735e7f5c1097
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_616592672ec58e383ef5a431bad121c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6fce67b8a4678b6bd6f0b99e96836b64 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-84 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10 |
| filingDate |
2007-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_accf81dca12f69e9bf0500e225419bec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f97320cedac252ac3d4728d81f3a9aad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44740d229074e5c166a46b33c2f73afe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d17061d6525295ebb7d0e6cee6ae5b11 |
| publicationDate |
2008-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008093594-A1 |
| titleOfInvention |
Organic semiconductor device, manufacturing method of the same, organic transistor array, and display |
| abstract |
The present invention mainly intends to provide an organic semiconductor device having an organic semiconductor transistor reduced in off current. In order to achieve the object, the present invention provides an organic semiconductor device comprising a substrate and an organic semiconductor transistor provided with a gate electrode formed on the substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes which are porous bodies and are formed on the gate insulation layer and an organic semiconductor layer which is made of an organic semiconductor material and formed only between the source and drain electrodes. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018077805-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10431358-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10085349-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10383214-B2 |
| priorityDate |
2006-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |