| abstract |
An oxidation apparatus for a semiconductor process includes a process container having a process field configured to accommodate target substrates at intervals vertically, a heater configured to heat the process field; an exhaust system configured to exhaust gas from inside the process field; an oxidizing gas supply circuit configured to supply an oxidizing gas to the process field; and a deoxidizing gas supply circuit configured to supply a deoxidizing gas to the process field. The oxidizing gas supply circuit includes an oxidizing gas nozzle extending over a vertical length corresponding to the process field, and having gas spouting holes arrayed over the vertical length corresponding to the process field. The deoxidizing gas supply circuit includes deoxidizing gas nozzles having different heights respectively corresponding to zones of the process field arrayed vertically, and each having a gas spouting hole formed at height of a corresponding zone. |