| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_154f5a8a983d88f296117dcc92946ab4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1296
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13454
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 |
| filingDate |
2007-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2932ea2849683e886e8b8b84d1c56d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2c2ebbdd814ed827e86c382bf853a57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81d9013262117dc82c3a2cebab8e0172
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2c3a4c2e3599cd24dbedee3b6437f93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fc72f0eb9d572dfac0834417e025919 |
| publicationDate |
2008-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008067514-A1 |
| titleOfInvention |
Flat panel display device with polycrystalline silicon thin film transistor |
| abstract |
The present invention relates to a flat panel display device comprising a polycrystalline silicon thin film transistor and provides a flat panel display device having improved characteristics by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a driving circuit portion and active channel regions of pixel portion. This may be achieved by having a different number of grain boundaries included in the polycrystalline silicon thin film formed in active channel regions of a switching thin film transistor and a driving thin film transistor formed in the pixel portion, and by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a thin film transistor for driving the pixel portion for each red, green and blue of the pixel portion. Further, this may be achieved by having a different number of grain boundaries included in polycrystalline silicon formed in active channel regions of an NMOS thin film transistor and a PMOS thin film transistor for forming CMOS transistor used in flat panel display device, thereby constructing a thin film transistor to obtain the improved characteristics for each transistor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349979-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013230976-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014027736-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8987120-B2 |
| priorityDate |
2003-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |