| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2c78d80e9d323ad7c79518c80e0b8d16 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-425 |
| filingDate |
2007-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efcc6a1142fa14547b75c46621ee4054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4746f828c36dd79ab167c874a3a8f817 |
| publicationDate |
2008-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008064191-A1 |
| titleOfInvention |
Modulation of Stress in Stress Film through Ion Implantation and Its Application in Stress Memorization Technique |
| abstract |
Some example embodiments of the invention provide a method to improve the performance of MOS devices by increasing the stress in the channel region. An example embodiment for a NMOS transistor is to form a tensile stress layer over a NMOS transistor. A heavy ion implantation is performed into the stress layer and then an anneal is performed. This increases the amount of stress from the stress layer that the gate retains/memorizes thereby increasing device performance. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8927361-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010237425-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008003734-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8546247-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8969969-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009227085-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102592979-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8691638-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7678636-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012146160-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8426266-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009142891-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011269278-A1 |
| priorityDate |
2005-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |