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publicationDate 2008-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2008063976-A1
titleOfInvention Photoresist Composition and Method Of Forming A Resist Pattern
abstract A resist material utilized in photolithography patterning includes a first material, and a second material dispersed in the first material. The second material is capable of diffusing to a top surface of the resist material, and has an etch rate different from that of the first material.
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