| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1d1b1ebc27443688744757d39a0255fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6cc1dbcabb59d486b5713f84a7886cdc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f8fb1ad42214c3fa6678c63ca89fc932
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e438f6161ed39bd831fd6c7d131aaeb8 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03G15-751 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03G15-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03G21-16 |
| filingDate |
2007-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f5f23a50edc9f4e5221c67a78202ba2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93f2e810cded625501448de773666f9a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2be9f304026d447b4b9358497d20ba9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ca566e35dbc18a4b1d7d24344a7d8ab |
| publicationDate |
2008-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008050666-A1 |
| titleOfInvention |
Electrophotographic photoconductor and image forming apparatus |
| abstract |
To provide an electrophotographic photoconductor which can effectively prevent the generation of exposure memory and the increase in residual potential by easily adjusting the electroconductivity in an intermediate layer, and an image forming apparatus using the electrophotographic photoconductor. An electrophotographic photoconductor comprising a base body, and an intermediate layer containing a titanium oxide and a binding resin and a photosensitive layer which are arranged on the base body, and an image forming apparatus using the same, wherein an average primary particle diameter of the titanium oxide is set to a value within the range of 5 to 30 nm, a thickness of the intermediate layer set to a value within the range of 0.5 to 3 μm, and the volume resistivity in the intermediate layer is set to a value within the range of 1×10 10 to 5×10 13 Ω·cm. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10209639-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8568946-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113253588-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007077507-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011104600-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8465890-B2 |
| priorityDate |
2006-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |