| abstract |
A slurry composition for a chemical mechanical processing process includes about 0.05 to about 0.3 percent by weight of a ceria abrasive, about 0.005 to about 0.04 percent by weight of an anionic surfactant, about 0.0005 to about 0.003 percent by weight of a polyoxyethylene-based nonionic surfactant, about 0.2 to about 1.0 percent by weight of a salt of polyacrylic acid having an average molecular weight substantially greater than a molecular weight of the anionic surfactant, and a remainder of water. In addition, a method of polishing an object layer and a method of manufacturing a semiconductor device using the slurry composition are also provided. |