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publicationDate 2008-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2008035912-A1
titleOfInvention Field-Effect Transistor, Method of Manufacturing the Same, and Electronic Device Using the Same
abstract A field-effect transistor includes a semiconductor layer ( 14 ), a source electrode ( 15 ) and a drain electrode ( 16 ) electrically connected to the semiconductor layer ( 14 ), and a gate electrode ( 12 ) for applying an electric field to the semiconductor layer ( 14 ) between the source electrode ( 15 ) and the drain electrode ( 16 ). The semiconductor layer ( 14 ) contains an organic semiconductor material and a plurality of thin wires made of an inorganic semiconductor.
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