| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a85177812b5ec619bf1e37048407dd1c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-09701
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F28F2220-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F28D15-0275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F28D15-0233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F28D15-0283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02595
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-373 |
| filingDate |
2007-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf15f248dfb0e9817b0fe8baded9fbc1 |
| publicationDate |
2008-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008029883-A1 |
| titleOfInvention |
Diamond composite heat spreaders having low thermal mismatch stress and associated methods |
| abstract |
A diamond composite heat spreader having a low thermal mismatch stress can improve reliability and cost of diamond-based heat spreaders. A diamond composite heat spreader can have a diamond film and a thermally conductive base having a residual thermal mismatch stress which is less than about 75% of a residual thermal mismatch stress which would result from forming the diamond film on the thermally conductive base using a high temperature deposition process at 700° C. The diamond film can be formed on the thermally conductive base using a low temperature vapor deposition process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8778784-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11335621-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8564120-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-174676-U1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103078052-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8575625-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011226512-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8222732-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9006086-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010164093-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11476178-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8531026-B2 |
| priorityDate |
2002-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |