| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18308 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate |
2007-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc9a1b7f12d2d79b0fbf1c23e9eb0fff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0547502ea6b99e02527e4c97dea5916a |
| publicationDate |
2008-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008002750-A1 |
| titleOfInvention |
Surface emitting semiconductor device |
| abstract |
A surface emitting semiconductor device comprises an active layer, a p-type III-V compound semiconductor layer, an n-type III-V compound semiconductor layer, and a burying layer. The active layer includes a primary surface, the primary surface having first and second areas. The p-type III-V compound semiconductor layer is provided on the first and second areas of the primary surface of the active layer. The n-type III-V compound semiconductor layer is provided on the second area of the primary surface of the active layer. The n-type III-V compound semiconductor is provided on the p-type III-V compound semiconductor layer. The n-type III-V compound semiconductor and the p-type III-V compound semiconductor layer form a tunnel junction. The n-type III-V compound semiconductor layer contains tellurium as an n-type dopant. The burying layer is made of III-V compound semiconductor. The n-type III-V compound semiconductor layer is covered with the burying layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8941140-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016163920-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114585-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9871165-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10475954-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10475956-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11563144-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9685587-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I617048-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8431945-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11322643-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10483432-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019038168-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016149075-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10153395-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011260188-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10128404-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9691938-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018258550-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I686950-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013248911-A1 |
| priorityDate |
2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |