| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f3c34a22f0a991e45b070afe7ac6d3b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5a3ce8a60e91538931ea007e7f522e03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_32946980079295d5ab8f7431a9cf4bf3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1292 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-476
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78669
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 |
| filingDate |
2006-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2174db613afb858ec9c752d7cf7026a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd8ed6b23a7b41d3dec4af8dc0cab429
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f36533df0c7a2c0b4aa10770de6e1c4 |
| publicationDate |
2008-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008001151-A1 |
| titleOfInvention |
Display device, method for fabricating thin film transistor and method for fabricating thin film transistor array substrate using the said method |
| abstract |
A method for fabricating a thin film transistor (TFT) on a substrate includes forming a gate electrode; forming a semiconductor layer being insulated from the gate electrode and partially overlapped with the gate electrode; sequentially forming first and second gate insulating layers between the gate electrode and the semiconductor layer, wherein the first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes a sol-compound; and forming source and drain electrodes at both sides of the semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7741643-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11616113-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9923159-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7855097-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017098792-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012286264-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022115413-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010005760-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010005760-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010006826-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008237600-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017047535-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8648343-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388895-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2528126-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014190669-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011017995-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010122274-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012146029-A1 |
| priorityDate |
2006-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |