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publicationDate 2007-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2007298596-A1
titleOfInvention Method of removing a photoresist pattern, method of forming a dual polysilicon layer using the removing method and method of manufacturing a semiconductor device using the removing
abstract In a method of removing a photoresist pattern, a photoresist pattern may be formed on an object layer. Impurities may be implanted into the object layer by a first ion implantation process employing the first photoresist pattern as a first ion implantation mask. The photoresist pattern hardened by the first ion implantation process may be transformed into a first water-soluble photoresist pattern. The water-soluble photoresist pattern may be removed from the object layer.
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