| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461 |
| filingDate |
2007-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fee233057bc27565d51af452071219ff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97ff0d4a39da217bb5680499469147a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4e0623a11f80c164bb8f879d0840692
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_baef0e6b9fe5cd220f88e7a025fd73d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03c4ad4f1647ac75db115451a8be4a2b |
| publicationDate |
2007-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007269989-A1 |
| titleOfInvention |
Inspection method of compound semiconductor substrate, compound semiconductor substrate, surface treatment method of compound semiconductor substrate, and method of producing compound semiconductor crystal |
| abstract |
There are provided an inspection method of a compound semiconductor substrate that can have the amount of impurities at the surface of the compound semiconductor substrate reduced, a compound semiconductor substrate, a surface treatment method of a compound semiconductor substrate, and a method of producing a compound semiconductor crystal. In the inspection method of the surface of the compound semiconductor substrate, the surface roughness Rms of the compound semiconductor substrate is measured using an atomic force microscope at the pitch of not more than 0.4 nm in a scope of not more than 0.2 μm square. The surface roughness Rms of the compound semiconductor substrate measured by the inspection method is not more than 0.2 nm. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10473445-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109801836-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102214726-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10663277-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I667687-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014197582-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10315275-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017363406-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10460924-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008206992-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012199956-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4174913-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11389902-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3258481-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014202997-A1 |
| priorityDate |
2006-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |