| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37f4922dfb7777b019e504b885211b8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_87343f0391f5074a8ffb73f681e41648 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
| filingDate |
2005-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd6b755c28efc44dd28e7ef364b89067
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8cbdad5d72d299c4ce6f3d0b6c3a990
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c88e43ded638e6549174c4dee867a59
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce3d86d14ce1c284e7f19f0c2c9453d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7754ffd841bbbf15a0aa16d87e8c475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26411aa724c8603ac1e048b6f1872299 |
| publicationDate |
2007-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007269965-A1 |
| titleOfInvention |
Indium Nitride Layer production |
| abstract |
The invention relates to a structure usable in electronic, optical or optoelectronic engineering which comprises a substantially crystalline layer made of an alloy consisting of at least one element of the column II of the periodic elements system and/or at least one element of the column IV of the periodic elements system and of N 2 (said alloy being noted N-IV-N 2 ), wherein said structure also comprises an InN layer. A method for producing an indium nitride thereof for indium nitride growth are also disclosed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013109160-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8846502-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10707082-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012204957-A1 |
| priorityDate |
2004-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |